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| Hall IC (Operating Temperature Range Topr = - 40 to +100C, Operating in Alternative Magnetic Field) 4.00.3 10.50.5 0.80.1 s Overview The DN6849/SE/TE/S is a combination of a Hall element, amplifier, Schmitt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmitt circuit, and drives the TTL or MOS IC directly. 123 5 2 0.7 DN6849/SE/TE/S DN6849 4.50.3 1.0 2.00.3 Unit : mm 5 0.50.1 1.27 5 0.43 - 0.05 1 : VCC 2 : GND 3 : Output + 0.1 2 SSIP003-P-0000A (E-3S) 4.520.3 4.520.3 (1.0) 2 Unit : mm DN6849SE s Features * High sensitivity and low drift * Stable temperature characteristics due to the additional tem* * * * perature compensator Wide operating supply voltage range (VCC=4.5 to 16V) Operating in alternative magnetic field TTL and MOS ICs directly drivable by output Output open collector 0.550.15 45 (1.0) 12.506.5 (0.72) 0.40.1 1.27 2 to 5 123 (0.4) 1.540.1 1 : VCC 2 : GND 3 : Output Unit : mm (0.6) 0.50.1 10.00.6 3.30.3 s Applications * Speed sensors * Position sensors * Rotation sensors * Keyboard switches * Microswitches Note) This IC is not suitable for car electrical equipments. 2 R0.25 SSIP003-P-0000 (SE-3S) DN6849TE 4.00.3 (1.0) (0.7) s Block Diagram * DN6849/SE/TE 0.60.15 (1.0) 1.27 Stabilized power supply temperature correction circuit 1 1.20.1 (0.2) 1 : VCC 2 : GND 3 : Output Unit : mm VCC Output DN6849S 123 3 SSIP003-P-0000B (TE-3S) 0.60.2 2 3 1.6 Hall element Amp. Schmitt trigger Output stage * DN6849S NC 2 or GND Stabilized power supply temperature correction circuit 1 0.950.2 VCC 0.40.2 3 Output 0.3 to 0.5 3.00.3 5.40.4 4 Hall element Amp. Schmitt trigger Output stage GND ESOP004-P-0200 (SOH-4D) 0.15 0 to 0.1 1 : VCC 2 : NC or GND 3 : Output 4 : GND 1.50.3 3.00.3 2 GND 1 4 s Absolute Maximum Ratings (Ta=25C) Parameter Supply voltage Supply current Circuit current Power dissipation Opearting ambient temperature Storage temperature Symbol VCC ICC IO PD Topr Tstg Rating 18 8 20 150 -40 to+100 -55 to+125 Unit V mA mA mW C C s Electrical Characteristics (Ta=25C) Parameter Operating flux density Hysteresis width Low output voltage High output current Supply current Symbol B1 (L to H) B2 (H to L) BW VOL IOH ICC VCC=12V VCC=12V VCC=12V VCC=4.5 to 16V, IO=12mA, B=17.5mT VCC=4.5 to 16V, VO=16V, B=-17.5mT VCC=16V VCC=4.5V 7 Condition min -17.5 typ -6 6 10 0.4 10 6 5.5 17.5 max Unit mT mT mT V A mA mA s Hall Element Position * DN6849 1.0 1.75 * DN6849SE 1.0 1.63 1.25 1.3 * DN6849TE 1.0 1.5 1.15 * DN6849S 0 1. 1. 0 1.5 Unit : mm The center of the Hall element is in the hatched area in the right figure. 1.0 1.0 1.0 1.5 Distance from package surface to sensor DN6849 0.7 DN6849SE 0.42 DN6849TE 0.4 DN6849S 0.65 s Flux-Voltage Conversion Characteristics Output voltage (VO) Marking surface B1 B2 Applied flux direction Flux density (B) s Precaution on Use 1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; VCC= 4.5 to 16V) 2. Change from "H" to "L" level increases the supply current by approx. 1mA. s Characteristics Curve Supply voltage - Ambient temperature 8 VCC = 12V 7 20 20 Ta = 25C Operating flux density - Ambient temperature Operating flux density - Supply voltage Operating flux density (mT) Supply current (mA) 6 VCC = 16V 5 4 VCC = 4.5V 3 2 1 0 Operating flux density (mT) 10 to L Sample 1, BH BH to L 10 0 Sample 2, BH to L Samp le 3, BH to L 0 BL to H -10 Sample 1, -10 BL to H Sample 2, BL to H Sample 3, B L to H -20 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -20 0 2 4 6 8 10 12 14 16 18 20 Ambient temperature (C) Ambient temperature (C) Supply voltage (V) Output low level voltage - Ambient temperature 100 90 VCC = 12V IO = 12mA Output "L" level voltage (mV) 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 Ambient temperature (C) |
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